CRTE10DN06LD-G - Silicon N-Channel Power MOSFET
CRTE10DN06LD-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and h
CRTE10DN06LD-G Features
* l Fast Switching l Low ON Resistance (Rdson≤100mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. VDSS ID PD(Ta=25℃) RDS(ON) 60 V 3.3 A 1.7 W 75 mΩ Absolute（TA= 25℃ u
