CRTE10DN06LD-G Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET CRTE10DN06LD-G General .
CRTE10DN06LD-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve.

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Datasheet Specifications

Part number: CRTE10DN06LD-G
Manufacturer: CR Micro
File Size: 530.44 KB
Datasheet: CRTE10DN06LD-G-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. VDSS ID PD(Ta=25℃) RDS(ON) 60 V 3.3 A 1.7 W 75 mΩ Absolute（TA= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TA = 100 °C Pulsed

CRTE10DN06LD-G Distributors

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CRTE10DN06LD-G Silicon N-Channel Power MOSFET CR Micro

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