11016 Datasheet | Specifications & PDF Download

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor MJ11016 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·

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MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in

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www.DataSheet4U.com CALIFORNIA MICRO DEVICES PRN100/110 Isolated Resistor Termination Network Features • Stable resistor network • High speed termi

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MJ11016 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NP

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MJ11012, MJ11014, MJ11016 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES

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MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR Module> PS1

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MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR Module> PS1

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