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MJ11016 - Silicon NPN Darlington Power Transistor

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Part number MJ11016
Manufacturer Inchange Semiconductor
File Size 207.75 KB
Description Silicon NPN Darlington Power Transistor
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Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 20A Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A Complement to the PNP MJ11015 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in complementary general purpose amplifier applications.ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Coll

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