MJ11016 Silicon NPN Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor MJ11016 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min. High DC Current Gain- : hFE= 1000(Min. Low Collector Saturation Vol.

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Datasheet Specifications

Part number: MJ11016
Manufacturer: Inchange Semiconductor
File Size: 207.75 KB
Datasheet: MJ11016_InchangeSemiconductor.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-

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MJ11016 Silicon NPN Darlington Power Transistor Inchange Semiconductor

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