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MJ11016

Silicon NPN Darlington Power Transistor

MJ11016 General Description


*Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.)
*High DC Current Gain- : hFE= 1000(Min.)@IC= 20A
*Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A
*Complement to the PNP MJ11015
*Minimum Lot-to-Lot variations for robust device performance and reliabl.

MJ11016 Datasheet (207.75 KB)

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Datasheet Details

Part number:

MJ11016

Manufacturer:

Inchange Semiconductor

File Size:

207.75 KB

Description:

Silicon npn darlington power transistor.

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MJ11016 Silicon NPN Darlington Power Transistor Inchange Semiconductor

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