MJ11016 Datasheet - Inchange Semiconductor

Datasheet Details

Part number:

MJ11016

Manufacturer:

Inchange Semiconductor

File Size:

207.75 KB

Description:

Silicon NPN Darlington Power Transistor

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor MJ11016 DESCRIPTION *Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) *High DC Current Gain- : hFE= 1000(Min.)@IC= 20A *Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A *Complement to the

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MJ11016, Silicon NPN Darlington Power Transistor

*Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) *High DC Current Gain- : hFE= 1000(Min.)@IC= 20A *Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A *Complement to the PNP MJ11015 *Minimum Lot-to-Lot variations for robust device performance and reliabl

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MJ11016 Silicon NPN Darlington Power Transistor Inchange Semiconductor

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