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MJ10003 - Silicon NPN Darlington Power Transistor

MJ10003 Description

isc Silicon NPN Darlington Power Transistor MJ10003 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min. High Switching Speed. Minimum Lot-to-Lot variations for robust device per.

MJ10003 Applications

* Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications as:
* Switching Regulators
* Inverters
* Solenoid and Relay Drivers
* Motor Controls
* Deflection Circuits

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Datasheet Details

Part number
MJ10003
Manufacturer
Inchange Semiconductor
File Size
212.10 KB
Datasheet
MJ10003-INCHANGE.pdf
Description
Silicon NPN Darlington Power Transistor

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Silicon NPN Darlington Power Transistor Inchange Semiconductor
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