MJ10003 Silicon NPN Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor MJ10003 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min. High Switching Speed. Minimum Lot-to-Lot variations for robust device per.

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Datasheet Specifications

Part number: MJ10003
Manufacturer: Inchange Semiconductor
File Size: 212.10 KB
Datasheet: MJ10003-INCHANGE.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications as:
* Switching Regulators
* Inverters
* Solenoid and Relay Drivers
* Motor Controls
* Deflection Circuits

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MJ10003 Silicon NPN Darlington Power Transistor Inchange Semiconductor

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