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MJ10003

Silicon NPN Darlington Power Transistor

MJ10003 General Description


*Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min.)
*High Switching Speed
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critica.

MJ10003 Datasheet (212.10 KB)

Preview of MJ10003 PDF

Datasheet Details

Part number:

MJ10003

Manufacturer:

Inchange Semiconductor

File Size:

212.10 KB

Description:

Silicon npn darlington power transistor.

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MJ10003 Silicon NPN Darlington Power Transistor Inchange Semiconductor

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