Datasheet Details
| Part number | MJ16110 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.99 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJ16110-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor MJ16110.
| Part number | MJ16110 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.99 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJ16110-InchangeSemiconductor.pdf |
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· Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in half bridge and full bridge off line converters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 650 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Pulsed 20 A IB Base Current-Continuous 10 A IBM Base Current-Pulsed 15 A PD Total Power Dissipation TC=25℃ TC=100℃ 175 100 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C ThermalResistance Junction To Case VALUE 0.92 UNIT ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA;
IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=5A ;IB=0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 1.2A VCE(sat)-3 VBE(sat) ICBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC= 10A ;IB= 2A IC= 10A ;IB= 2A;TC=100℃ IC= 10A ;IB= 2A IC= 10A ;IB= 2A;TC=100℃ VCBO=650V,IE=0;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJ16110 | Power Transistors | Motorola |
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MJ16110 | NPN Silicon Power Transistors | ON |
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