Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ16110/D
Designer's
NPN Silicon Power Transistors
SWITCHMODE Bridge Series
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- - . . . specifically designed for use in half bridge and full bridge off line converters. Excellent Dynamic Saturation Characteristics Rugged RBSOA Capability Collector- Emitter Sustaining Voltage
- VCEO(sus)
- 400 V Collector- Emitter Breakdown
- V(BR)CES
- 650 V State- of- Art Bipolar Power Transistor Design Fast Inductive Switching: tfi = 25 ns (Typ) @ 100_C tc = 50 ns (Typ) @ 100_C tsv = 1 µs (Typ) @ 100_C
- Ultrafast FBSOA Specified
- 100_C Performance Specified for: RBSOA Inductive Load Switching Saturation Voltages Leakages MAXIMUM...
