MJ1000 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage-.
| Part number | MJ1000 |
|---|---|
| Download | MJ1000 Datasheet (PDF) |
| File Size | 202.88 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
MJ1000 | Medium-Power Complementary Silicon Transistors |
SavantIC |
MJ1000 | (MJ1000 / MJ1001) SILICON POWER TRANSISTOR |
| MJ1000 | (MJ1000 / MJ1001) Complementary Power Darlingtons | |
Motorola Semiconductor |
MJ10000 | 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS |
Wing Shing Computer Components |
MJ10000 | NPN Silicon Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage-.