Part MJ1000
Description NPN Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 202.88 KB
Inchange Semiconductor
MJ1000

Overview

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 3A Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation.