Datasheet Details
| Part number | MJ1000 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.88 KB |
| Description | NPN Transistor |
| Datasheet | MJ1000-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor MJ1000.
| Part number | MJ1000 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.88 KB |
| Description | NPN Transistor |
| Datasheet | MJ1000-INCHANGE.pdf |
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|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in plementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 10 A IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.1 A 90 W 200 ℃ Tstg Storage Temperature Range -55~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.94 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
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