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MJ10005 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.

General Description

·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignition ·Alternator regulator ·Motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation Max.Junction Temperature 500 V 400 V 8 V 20 A 30 A 2.5 A 175 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.0 ℃/W isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJ10005 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage VCE(sat)1 Collector-Emitter Voltage VCE(sat)2 Collector-Emitter Voltage Sustaining IC= 250mA, IB= 0 Saturation IC= 10A ,IB= 400mA Saturation IC= 20A ,IB= 2.0A VBE(sat)1 Base-Emitter Saturation Voltage IC= 10A ,IB= 400mA VBE(sat)2 Base-Emitter Saturation Voltage IC= 10A ,IB= 400mA;Tc=100℃ ICER Collector Cutoff Current VCB=400V, IE= 0;RBE=50mΩ ICEV Collector Cutoff Current VCE= 400V, IB= 0;VBE=1.5V IEBO Emitter Cutoff Current VEB= 2V;

IC= 0 hFE-1 DC Current Gain IC= 5A ;

VCE= 5V hFE-2 DC Current Gain IC= 10A ;

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