MJ10005P Description
·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power,fast switching applications. Tj=100℃ VCE= 450V, IB=0,VBE=1.5V VCE= 450V, IB=0,VBE=1.5V Tj=150℃ VEB= 2V; IC= 0 hFE DC Current Gain IC= 5A.