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MJ11019 PNP Transistor

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Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain. Low Collector-Emitter Saturation Voltage. Complement to the NPN MJ11020. 100% avalanche tested. Minimum Lot.

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Datasheet Specifications

Part number
MJ11019
Manufacturer
INCHANGE
File Size
207.55 KB
Datasheet
MJ11019-INCHANGE.pdf
Description
PNP Transistor

Applications

* Designed for general purpose amplifiers ,low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -200 VCEO Collector-Emitter Voltage -200 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuo

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