Datasheet4U Logo Datasheet4U.com

MJ11030

NPN Transistor

MJ11030 General Description


*Collector-Emitter Breakdown Voltage : V(BR)CEO= 90V(Min.)
*High DC Current Gain- : hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A
*Complement to the PNP MJ11031
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for use .

MJ11030 Datasheet (203.67 KB)

Preview of MJ11030 PDF

Datasheet Details

Part number:

MJ11030

Manufacturer:

INCHANGE

File Size:

203.67 KB

Description:

Npn transistor.

📁 Related Datasheet

MJ11030 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (Motorola)

MJ11030 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (ON)

MJ11030 COMPLEMENTARY DARLINGTON POWER TRANSISTOR (Seme LAB)

MJ11030 Power Transistor (DIGITRON)

MJ11031 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (Motorola)

MJ11031 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (ON)

MJ11031 COMPLEMENTARY DARLINGTON POWER TRANSISTOR (Seme LAB)

MJ11031 Power Transistor (DIGITRON)

MJ11031 PNP Transistor (INCHANGE)

MJ11032 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (Motorola)

TAGS

MJ11030 NPN Transistor INCHANGE

Image Gallery

MJ11030 Datasheet Preview Page 2

MJ11030 Distributor