MJ11017 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

MJ11017

Manufacturer:

INCHANGE

File Size:

208.59kb

Download:

📄 Datasheet

Description:

Pnp transistor.

High DC Current Gain- : hFE = 400(Min)@ IC= -10A

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -150V(Min)

MJ11017 Application

• Applications
• Designed for general purpose amplifiers ,low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=

TAGS

MJ11017

INCHANGE

📁 Related Datasheet

MJ11011 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor MJ11011 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.) ·High DC Current Gain- :.

MJ11012 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.

MJ11012 - High-Current Complementary Silicon NPN Transistors (ON Semiconductor)
MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in .

MJ11012 - NPN Transistor (DIGITRON)
MJ11012, MJ11014, MJ11016 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES .

MJ11012 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor MJ11012 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : .

MJ11013 - DARLINGTON POWER TRANSISTORS (ON Semiconductor)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.

MJ11013 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.

MJ11013 - POWER TRANSISTOR (Inchange Semiconductor)
isc Silicon PNP Darlington Power Transistor MJ11013 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.) ·High DC Current Gain- .

MJ11014 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.

MJ11014 - DARLINGTON POWER TRANSISTORS (ON Semiconductor)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.