MJ11017 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 400(Min)@ IC= -10A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -150V(Min). Low Collector-Emitter S.

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Datasheet Specifications

Part number: MJ11017
Manufacturer: INCHANGE
File Size: 208.59 KB
Datasheet: MJ11017-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for general purpose amplifiers ,low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -150 VCEO Collector-Emitter Voltage -150 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuo

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MJ11017 PNP Transistor INCHANGE

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