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MJ11029 PNP Transistor

MJ11029 Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min. High DC Current Gain- : hFE= 1000(Min. C.

MJ11029 Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current

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Datasheet Details

Part number
MJ11029
Manufacturer
INCHANGE
File Size
203.83 KB
Datasheet
MJ11029-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
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