MJ11011 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

MJ11011

Manufacturer:

INCHANGE

File Size:

203.85kb

Download:

📄 Datasheet

Description:

Pnp transistor.

  • Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.)
  • High DC Current Gain- : hFE= 1000(Min.)@IC= -20A
  • Datasheet Preview: MJ11011 📥 Download PDF (203.85kb)
    Page 2 of MJ11011

    MJ11011 Application

    • Applications
    • Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

    TAGS

    MJ11011
    PNP
    Transistor
    INCHANGE

    📁 Related Datasheet

    MJ11012 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)
    MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.

    MJ11012 - High-Current Complementary Silicon NPN Transistors (ON Semiconductor)
    MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in .

    MJ11012 - NPN Transistor (DIGITRON)
    MJ11012, MJ11014, MJ11016 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES .

    MJ11012 - NPN Transistor (INCHANGE)
    isc Silicon NPN Darlington Power Transistor MJ11012 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : .

    MJ11013 - DARLINGTON POWER TRANSISTORS (ON Semiconductor)
    MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.

    MJ11013 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)
    MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.

    MJ11013 - POWER TRANSISTOR (Inchange Semiconductor)
    isc Silicon PNP Darlington Power Transistor MJ11013 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.) ·High DC Current Gain- .

    MJ11014 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)
    MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.

    MJ11014 - DARLINGTON POWER TRANSISTORS (ON Semiconductor)
    MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.

    MJ11014 - NPN Transistor (DIGITRON)
    MJ11012, MJ11014, MJ11016 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES .

    Stock and price

    Motorola Mobility LLC
    Bristol Electronics
    MJ11011
    25 In Stock
    Qty : 10 units
    Unit Price : $4.48
    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts