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MJ11011 - PNP Transistor

MJ11011 Description

isc Silicon PNP Darlington Power Transistor MJ11011 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min. High DC Current Gain- : hFE= 1000(Min. Low Collector Saturation Vo.

MJ11011 Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current

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Datasheet Details

Part number
MJ11011
Manufacturer
INCHANGE
File Size
203.85 KB
Datasheet
MJ11011-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE MJ11011-like datasheet