Datasheet Details
| Part number | MJ11020 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.38 KB |
| Description | NPN Transistor |
| Datasheet | MJ11020-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | MJ11020 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.38 KB |
| Description | NPN Transistor |
| Datasheet | MJ11020-INCHANGE.pdf |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V (Min.) ·High DC Current Gain- : hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage- : VCE (sat)= 1.0V(Max.)@ IC= 5.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifiers, low frequency switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 200 VCEO Collector-Emitter Voltage 200 VEBO Emitter-Base Voltage 5 IC Collector Current-Continunous 15 ICM Collector Current-Peak 30 IB Base Current-Continunous 0.5 PC Collector Power Dissipation @TC=25℃ 175 Tj Junction Temperature 175 Tstg Storage Temperature Range -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.86 ℃/W MJ11020 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A;
| Part Number | Description |
|---|---|
| MJ11022 | NPN Transistor |
| MJ11028 | NPN Transistor |
| MJ11029 | PNP Transistor |
| MJ11011 | PNP Transistor |
| MJ11012 | NPN Transistor |
| MJ11014 | NPN Transistor |
| MJ11015 | PNP Transistor |
| MJ11017 | PNP Transistor |
| MJ11018 | NPN Transistor |
| MJ11019 | PNP Transistor |