MJ11022 - DARLINGTON POWER TRANSISTORS

Key Features

http://onsemi. com.
High dc Current Gain @ 10 Adc.
hFE = 400 Min (All Types).
Collector.
Emitter Sustaining Voltage.
Low Collector.
Emitter Saturation VCE(sat) VCEO(sus) = 250 Vdc (Min).
MJ11022, 21 = 1.0 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A 100% SOA Tested @ VCE = 44 V IC = 4.0 A t = 250 ms Pb.
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15 AMPERE.

MJ11022 darlington power transistors by ON - Datasheet Preview

Datasheet Details

Part number	MJ11022
Manufacturer	ON
File Size	104.79 KB
Description	DARLINGTON POWER TRANSISTORS
Datasheet	MJ11022 Datasheet

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www.DataSheet4U.com MJ11021(PNP) MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features http://onsemi.com • High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage • Low Collector−Emitter Saturation VCE(sat) VCEO(sus) = 250 Vdc (Min) − MJ11022, 21 = 1.0 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A 100% SOA Tested @ VCE = 44 V IC = 4.