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MJ11022 - 30 AMPERE DARLINGTON POWER TRANSISTORS

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MJ11021 30 AMPERE DARLINGTON POWER TRANSISTORS
MJ11028 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
MJ11029 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
MJ11030 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
MJ11031 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11017/D Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector–Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) – MJ11018, 17 VCEO(sus) = 250 Vdc (Min) – MJ11022, 21 • Low Collector–Emitter Saturation VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A • Monolithic Construction • 100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms.