MJ11022 Datasheet and Specifications PDF

The MJ11022 is a 30 AMPERE DARLINGTON POWER TRANSISTORS.

Datasheet4U Logo
Part NumberMJ11022 Datasheet
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11017/D Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switchi. ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.
Part NumberMJ11022 Datasheet
DescriptionDARLINGTON POWER TRANSISTORS
Manufactureronsemi
Overview MJ11021(PNP) MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers.
* High dc Current Gain @ 10 Adc
* hFE = 400 Min (All Types)
* Collector
*Emitter Sustaining Voltage
* Low Collector
*Emitter Saturation VCE(sat) VCEO(sus) = 250 Vdc (Min)
* MJ11022, 21 = 1.0 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A 100% SOA Tested @ VCE = 44 V IC = 4.0 A t = 2.
Part NumberMJ11022 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V (Min.) ·High DC Current Gain- : hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage- : VCE (sat)= 1.0V(Max.)@ IC= 5.0A ·Minimum Lot-to-Lot. sc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB=.