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MJ11021(PNP) MJ11022 (NPN) Complementary Darlington Silicon Power Transistors
Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications.
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• High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage • Low Collector−Emitter Saturation
VCE(sat) VCEO(sus) = 250 Vdc (Min) − MJ11022, 21 = 1.0 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A 100% SOA Tested @ VCE = 44 V IC = 4.