MJ11029 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

Key Features

High DC Current Gain.
hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc.
Curves to 100 A (Pulsed).
Diode Protection to Rated IC.
Monolithic Construction with Built.
In Base.
Emitter Shunt Resistor.
Junction Temperature to + 200_C.
Pb.
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MJ11029 complementary silicon darlington power transistors by ON - Datasheet Preview

Datasheet Details

Part number	MJ11029
Manufacturer	ON
File Size	116.12 KB
Description	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
Datasheet	MJ11029 Datasheet

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Other Datasheets by ON

Part Number	Description
MJ11021	DARLINGTON POWER TRANSISTORS
MJ11022	DARLINGTON POWER TRANSISTORS
MJ11028	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
MJ11030	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
MJ11031	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

Full PDF Text Transcription (Reference)

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MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.