MJ11029 Description
MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current plementary Silicon Power Transistors High−Current plementary Silicon Power Transistors are for use as output devices in plementary general purpose amplifier applications.
MJ11029 Key Features
- High DC Current Gain
- hFE = 1000 (Min) @ IC = 25 Adc
- Curves to 100 A (Pulsed)
- Diode Protection to Rated IC
- Monolithic Construction with Built-In Base-Emitter Shunt Resistor
- Junction Temperature to + 200_C
- Pb-Free Packages are Available
- Continuous
- Peak (Note 1)
- Continuous