MJ11029 Description
·Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -25A.
| Part number | MJ11029 |
|---|---|
| Download | MJ11029 Datasheet (PDF) |
| File Size | 203.83 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
MJ11029 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
ON |
MJ11029 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
Seme LAB |
MJ11029 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR |
DIGITRON |
MJ11029 | Power Transistor |
·Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -25A.