Datasheet Summary
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage
: V(BR)CEO= -60V(Min.)
- High DC Current Gain-
: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A
- plement to the NPN MJ11028
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use as output devices in plementary general purpose amplifier...
