MJ11029 Overview
·Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -25A.
| Part number | MJ11029 |
|---|---|
| Datasheet | MJ11029-INCHANGE.pdf |
| File Size | 203.83 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -25A.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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MJ11029 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS | Motorola |
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MJ11029 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS | ON |
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MJ11029 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR | Seme LAB |
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MJ11029 | Power Transistor | DIGITRON |
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