MJ1800 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJ1800 .
High Collector-Emitter Voltage. Good Linearity of hFE APPLICATIONS. Designed for use in vertical deflection amplifier circuits in televi.

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Datasheet Specifications

Part number: MJ1800
Manufacturer: Inchange Semiconductor
File Size: 133.72 KB
Datasheet: MJ1800-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in vertical deflection amplifier circuits in television receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 250 V VCBO Collector- Base Voltage 500 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 5

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MJ1800 Silicon NPN Power Transistor Inchange Semiconductor

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