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MJ1800 - Silicon NPN Power Transistor

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Datasheet Details

Part number MJ1800
Manufacturer Inchange Semiconductor
File Size 133.72 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet MJ1800-InchangeSemiconductor.pdf

MJ1800 Product details

Description

High Collector-Emitter Voltage Good Linearity of hFE APPLICATIONS Designed for use in vertical deflection amplifier circuits in television receivers.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 250 V VCBO Collector- Base Voltage 500 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERM

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