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MJ1800

Silicon NPN Power Transistor

MJ1800 General Description


*High Collector-Emitter Voltage
*Good Linearity of hFE APPLICATIONS
*Designed for use in vertical deflection amplifier circuits in television receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 250 V VCBO Collector- Base Volta.

MJ1800 Datasheet (133.72 KB)

Preview of MJ1800 PDF

Datasheet Details

Part number:

MJ1800

Manufacturer:

Inchange Semiconductor

File Size:

133.72 KB

Description:

Silicon npn power transistor.

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MJ1800 Silicon NPN Power Transistor Inchange Semiconductor

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