MJ11013 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Darlington Power Transistor MJ11013 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min. High DC Current Gain- : hFE= 1000(Min. Low Collector Saturation V.

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Datasheet Specifications

Part number: MJ11013
Manufacturer: Inchange Semiconductor
File Size: 208.67 KB
Datasheet: MJ11013_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCEO Collector-Emitter Voltage -90 V VEBO Emitter-Base Voltage -5 V IC Collector Current

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MJ11013 POWER TRANSISTOR Inchange Semiconductor

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