MJ11013 Datasheet, Transistor, Inchange Semiconductor

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MJ11013

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Inchange Semiconductor

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📄 Datasheet

Description:

Power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.)

High DC Current Gain- : hFE= 1000(Min.)@IC= -20A

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MJ11013 Application

• Applications
• Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

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MJ11013

Inchange Semiconductor

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