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MJ11013 Datasheet - Inchange Semiconductor

MJ11013 POWER TRANSISTOR

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.) *High DC Current Gain- : hFE= 1000(Min.)@IC= -20A *Low Collector Saturation Voltage- : VCE (sat)= -3.0V(Max.)@ IC= -20A *Complement to the NPN MJ11014 *Minimum Lot-to-Lot variations for robust device performance and rel.

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Datasheet Details

Part number:

MJ11013

Manufacturer:

Inchange Semiconductor

File Size:

208.67 KB

Description:

Power transistor.

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MJ11013 MJ11013 POWER TRANSISTOR Inchange Semiconductor

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