MJ10012T Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min). High Power Dissipation. DARLINGTON. 100% avalanche tested. Minimum Lo.

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Datasheet Specifications

Part number: MJ10012T
Manufacturer: Inchange Semiconductor
File Size: 216.74 KB
Datasheet: MJ10012T-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Automotive ignition
* Switching regulator
* Motor control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10

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MJ10012T Silicon NPN Power Transistor Inchange Semiconductor

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