MJ10012T Datasheet PDF - Inchange Semiconductor Silicon NPN Power Transistor Specs

MJ10012T - Silicon NPN Power Transistor

Datasheet Summary

Description

Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) High Power Dissipation DARLINGTON 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor co

Datasheet Details

Part number	MJ10012T
Manufacturer	Inchange Semiconductor
File Size	216.74 KB
Description	Silicon NPN Power Transistor
Datasheet	MJ10012T Datasheet
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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·High Power Dissipation ·DARLINGTON ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Current-peak 15 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 65 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX U

Published: Nov 8, 2016 |