Datasheet4U Logo Datasheet4U.com

MJ10012T Datasheet - Inchange Semiconductor

Silicon NPN Power Transistor

MJ10012T General Description

*Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) *High Power Dissipation *DARLINGTON *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Automotive ignition *Switching regulator *Motor co.

MJ10012T Datasheet (216.74 KB)

Preview of MJ10012T PDF

Datasheet Details

Part number:

MJ10012T

Manufacturer:

Inchange Semiconductor

File Size:

216.74 KB

Description:

Silicon npn power transistor.

📁 Related Datasheet

MJ10012 10 AMPERE POWER TRANSISTORS (Motorola Inc)

MJ10012 NPN Silicon Transistor (Wing Shing Computer Components)

MJ10012 Silicon NPN Power Transistors (SavantIC)

MJ10012 NPN Silicon Power Darlington Transistor (NTE)

MJ1001 Medium-Power Complementary Silicon Transistors (Motorola Inc)

MJ1001 (MJ1000 / MJ1001) SILICON POWER TRANSISTOR (SavantIC)

MJ1001 (MJ1000 / MJ1001) Complementary Power Darlingtons (Comset Semiconductors)

MJ10013 Power Transistors (Mospec Semiconductor)

MJ10014 Power Transistors (Mospec Semiconductor)

MJ10015 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS (Motorola Inc)

TAGS

MJ10012T Silicon NPN Power Transistor Inchange Semiconductor

Image Gallery

MJ10012T Datasheet Preview Page 2 MJ10012T Datasheet Preview Page 3

MJ10012T Distributor