12.47 Datasheet | Specifications & PDF Download

SRFET TM AO4712 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFET The AO4712 uses advanced trench technology with a mo

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EiceDRIVER™ 2ED314xMC12L (2ED-X3 Compact) Datasheet 2ED314xMC12L (2ED-X3 Compact) Dual-channel isolated gate driver IC with dead-time control Features

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UNISONIC TECHNOLOGIES CO., U12JZ47/A HIGH COMMUTATING TRIAC DESCRIPTION The U12JZ47/A is a bi-directional, silicon planar type triac in full plastic p

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Ordering number : 1 3 0 4 B Monolithic Linear IC LA1247 AM Electronic Tuner

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1N4678 THRU 1N4717 SILICON ZENER DIODE LOW LEVEL 500mW, 1.8 THRU 43 VOLT 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL S

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DOCUMENT NUMBER 9S12DT128DGV2/D MC9S12DT128 Device User Guide V02.09 Covers also MC9S12DT128E, MC9S12DG128E, MC9S12DJ128E, MC9S12DG128, MC9S12DJ128,

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1N4678(UR)-1N4717(UR) High-reliability discrete products and engineering services since 1977 500mW AXIAL LEADED ZENER DIODES FEATURES  Available a

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2012 SPECIFICATION OF TFT MODULE T28-HX8347I-V12 Remark: T28-HX8347I-V12 REV:V11 Date:2011-11-14 Page: 1 of 13 Contents Contents Contents

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IGBT/SiC Diode Co-pack Features •Optimal Punch Through (OPT) technology •SiC freewheeling diode • Positive temperature coefficient for easy parallel

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New Product LM12S47 Features n n n 31 cm [12.1 ] SVGA format Less shadowing utilizing SA* technology Fast response time (150 ms) * Sharp Addressing

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Surface Mount Aluminum Electrolytic Capacitors FEATURES • CYLINDRICAL V-CHIP CONSTRUCTION FOR SURFACE MOUNTING • AVAILABLE WITH ANTI-VIBRATION WIDE TE

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Color/proximity sensor P12347-01CT Color sensor, proximity sensor, and 3-color LED incorporated into a single package This is a multifunctional sen

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www.vishay.com 672D Vishay Sprague Aluminum Capacitors +105 °C, Miniature, Radial Lead FEATURES • Original SMPS output capacitors • Minimal ESR c

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Multilayer Ceramic Chip Capacitors FEATURES • STANDARD EIA 0805 & 1206 PACKAGING • EACH COMPONENT CONTAINS 4 ISOLATED CERAMIC CAPACITORS • AVAILABLE I

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  Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe O

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Data Sheet 2.35 V to 5.25 V, 1 MSPS, 12-/10-/8-Bit ADCs in 6-Lead SC70 AD7476A/AD7477A/AD7478A FEATURES Fast throughput rate: 1 MSPS Specified for V

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MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M BLOCK DIAGRAM 2 3 400-470MHz 13W 12.5V, 2 Stage A

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GC2X10MPS12-247 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features  High Avalanche (UIS) Capability  Enhanced Surge Current Capability 

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Rating: 1 ★ (6 votes)