MT47H128M4 - DDR2 SDRAM

Features

DDR2 SDRAM MT47H128M4.
32 Meg x 4 x 4 banks MT47H64M8.
16 Meg x 8 x 4 banks MT47H32M16.
8 Meg x 16 x 4 banks Features.
VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V.
JEDEC-standard 1.8V I/O (SSTL_18-compatible).
Differential data strobe (DQS, DQS#) option.
4n-bit prefetch architecture.
Duplicate output strobe (RDQS) option for x8.
DLL to align DQ and DQS transitions with CK.
4 internal banks for concurrent operatio.

Micron Technology

Datasheet Details

Part number	MT47H128M4
Manufacturer	Micron Technology
File Size	2.30 MB
Description	DDR2 SDRAM
Datasheet	MT47H128M4 Datasheet
Additional preview pages of the MT47H128M4 datasheet.

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Full PDF Text Transcription

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512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 – 32 Meg x 4 x 4 banks MT47H64M8 – 16 Meg x 8 x 4 banks MT47H32M16 – 8 Meg x 16 x 4 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.

Published: Sep 7, 2007 |