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MT40A1G16 - 1.2V DDR4 SDRAM

General Description

TwinDie™ 1.2V DDR4 SDRAM MT40A1G16

The 16Gb (TwinDie™) DDR4 SDRAM uses Micron’s 8Gb DDR4 SDRAM die; two x8s combined to make one x16.

Key Features

  • Uses two x8 8Gb Micron die to make one x16.
  • Single rank TwinDie.
  • VDD = VDDQ = 1.2V (1.14.
  • 1.26V).
  • 1.2V VDDQ-terminated I/O.
  • JEDEC-standard ball-out.
  • Low-profile package.
  • TC of 0°C to 95°C.
  • 0°C to 85°C: 8192 refresh cycles in 64ms.
  • 85°C to 95°C: 8192 refresh cycles in 32ms Options Marking.
  • Configuration.
  • 64 Meg x 16 x 16 banks x 1 rank 1G16.
  • 96-bal.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
16Gb: x16 TwinDie Single Rank DDR4 SDRAM Description TwinDie™ 1.2V DDR4 SDRAM MT40A1G16 – 64 Meg x 16 x 16 Banks x 1 Ranks Description The 16Gb (TwinDie™) DDR4 SDRAM uses Micron’s 8Gb DDR4 SDRAM die; two x8s combined to make one x16. Similar signals as mono x16, there is one extra ZQ connection for faster ZQ Calibration and a BG1 control required for x8 addressing. Refer to Micron’s 8Gb DDR4 SDRAM data sheet (x8 option) for the specifications not included in this document. Specifications for base part number MT40A1G8 correlate to TwinDie manufacturing part number MT40A1G16. Features • Uses two x8 8Gb Micron die to make one x16 • Single rank TwinDie • VDD = VDDQ = 1.2V (1.14–1.26V) • 1.