MT40A1G4 Description
DDR4 SDRAM MT40A1G4 MT40A512M8 MT40A256M16.
MT40A1G4 Key Features
- VDD = VDDQ = 1.2V ±60mV
- VPP = 2.5V, -125mV/+250mV
- On-die, internal, adjustable VREFDQ generation
- 1.2V pseudo open-drain I/O
- TC maximum up to 95°C
- 64ms, 8192-cycle refresh up to 85°C
- 32ms, 8192-cycle refresh at >85°C to 95°C
- 16 internal banks (x4, x8): 4 groups of 4 banks each
- 8 internal banks (x16): 2 groups of 4 banks each
- 8n-bit prefetch architecture