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MT40A1G4 - DDR4 SDRAM

Key Features

  • VDD = VDDQ = 1.2V ±60mV.
  • VPP = 2.5V,.
  • 125mV/+250mV.
  • On-die, internal, adjustable VREFDQ generation.
  • 1.2V pseudo open-drain I/O.
  • TC maximum up to 95°C.
  • 64ms, 8192-cycle refresh up to 85°C.
  • 32ms, 8192-cycle refresh at >85°C to 95°C.
  • 16 internal banks (x4, x8): 4 groups of 4 banks each.
  • 8 internal banks (x16): 2 groups of 4 banks each.
  • 8n-bit prefetch architecture.
  • Programmable data strobe pr.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DDR4 SDRAM MT40A1G4 MT40A512M8 MT40A256M16 Features • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV/+250mV • On-die, internal, adjustable VREFDQ generation • 1.