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MT40A2G8 - 1.2V DDR4 SDRAM

Download the MT40A2G8 datasheet PDF. This datasheet also covers the MT40A4G4 variant, as both devices belong to the same 1.2v ddr4 sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

TwinDie™ 1.2V DDR4 SDRAM MT40A4G4 128 Meg x 4 x 16 Banks x 2 Ranks MT40A2G8

The 16Gb (TwinDie™) DDR4 SDRAM uses Micron’s 8Gb DDR4 SDRAM die (essentially two ranks of the 8Gb DDR4 SDRAM).

Key Features

  • Uses 8Gb Micron die.
  • Two ranks (includes dual CS#, ODT, and CKE balls).
  • Each rank has 4 groups of 4 internal banks for con- current operation.
  • VDD = VDDQ = 1.2V (1.14.
  • 1.26V).
  • 1.2V VDDQ-terminated I/O.
  • JEDEC-standard ball-out.
  • Low-profile package.
  • TC of 0°C to 95°C.
  • 0°C to 85°C: 8192 refresh cycles in 64ms.
  • 85°C to 95°C: 8192 refresh cycles in 32ms Options.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT40A4G4-Micron.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
16Gb: x4, x8 TwinDie DDR4 SDRAM Description TwinDie™ 1.2V DDR4 SDRAM MT40A4G4 – 128 Meg x 4 x 16 Banks x 2 Ranks MT40A2G8 – 64 Meg x 8 x 16 Banks x 2 Ranks Description The 16Gb (TwinDie™) DDR4 SDRAM uses Micron’s 8Gb DDR4 SDRAM die (essentially two ranks of the 8Gb DDR4 SDRAM). Refer to Micron’s 8Gb DDR4 SDRAM data sheet for the specifications not included in this document. Specifications for base part number MT40A2G4 correlate to TwinDie manufacturing part number MT40A4G4; specifications for base part number MT40A1G8 correlate to TwinDie manufacturing part number MT40A2G8. Features • Uses 8Gb Micron die • Two ranks (includes dual CS#, ODT, and CKE balls) • Each rank has 4 groups of 4 internal banks for con- current operation • VDD = VDDQ = 1.2V (1.14–1.26V) • 1.