MT47H128M16
MT47H128M16 is (MT47HxxxMxx) DDR2 SDRAM manufactured by Micron Technology.
2Gb: x4, x8, x16 DDR2 SDRAM Features
DDR2 SDRAM
MT47H512M4
- 64 Meg x 4 x 8 banks MT47H256M8
- 32 Meg x 8 x 8 banks MT47H128M16
- 16 Meg x 16 x 8 banks Features
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- Vdd = +1.8V ±0.1V, VddQ = +1.8V ±0.1V JEDEC-standard 1.8V I/O (SSTL_18-patible) Differential data strobe (DQS, DQS#) option 4n-bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ latency
- 1 tCK Programmable burst lengths: 4 or 8 Adjustable data-output drive strength 64ms, 8,192-cycle...
