120-001 Datasheet | Specifications & PDF Download

nfidentinally OTA7001A Co se O 1200CH TFT LCD Source Driver with Tech U TCON ORFISoEr Preliminary NOV. 08, 2011 Version 0.5 ORISE Technology r

(36 views)

MN-120SERIES Power Over Ethernet (PoE) Transformer ® Phone: 1.605.884.0195 Fax: 1.605.884.0199 www.minntronix.com  Optimized for 250kHz with 14-60

(33 views)

TLE4973-xxxxT5-S0001 Datasheet XENSIV™ high accuracy coreless current sensor for internal current rail applications Features • High accurate, scalab

(27 views)

TLE4973-xxxxT5-S0001 Datasheet XENSIV™ high accuracy coreless current sensor for internal current rail applications Features • High accurate, scalab

(27 views)

Specification for TFT AFC12001920A0-10.1INTM-I Revision D A Orient Display FC TFT Type 12001920 Resolution 1200 x 1920 A0 Serial A0 10.1 10.1”

(25 views)

Solderable GaAs Constant Gamma Flip-Chip Varactor Diode Features • Usable Past 70 GHz • Constant Gamma for Linear Tuning • Low Parasitic Capacitance •

(25 views)

Solderable GaAs Constant Gamma Flip-Chip Varactor Diode Features • Usable Past 70 GHz • Constant Gamma for Linear Tuning • Low Parasitic Capacitance •

(25 views)

Solderable GaAs Constant Gamma Flip-Chip Varactor Diode Features • Usable Past 70 GHz • Constant Gamma for Linear Tuning • Low Parasitic Capacitance •

(24 views)

VDS 1200 V C3M0016120D ID @ 25˚C 115 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 16 mΩ N-Channel Enhancement Mode

(19 views)

120-001 Type A Series 72 Annular Convoluted Tubing Thermally Stabilized Kynar® 120-001-16 Product Series Basic No. Dash No. (Table I) TYPE A A DIA

(18 views)

E4M0013120K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • E4M generation SiC MOSFET techno

(17 views)

VDS 1200 V C3M0016120K ID @ 25˚C 115 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 16 mΩ N-Channel Enhancement Mode

(16 views)

72-308W Quarter Brick Converter Features  Standard Quarter Brick Footprint  18-36, 36-75VDC Inputs  1.2V 60A, 28V 11A Nominal Outputs  Through Hol

(15 views)

BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs High voltage, high current Darlington transistor array BA12001B / BA12003B / BA12003BF / BA12

(13 views)

QVE00120 OPTOLOGIC® OPTICAL INTERRUPTER SWITCH PACKAGE DIMENSIONS .551 (14.00) + .236 (6.00) E .020 (.50) C L C L OPTICAL C.L. .100 (2.50) + .197 (5.0

(13 views)

(13 views)

Datasheet SDS120J010G3 1200V/10A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp

(13 views)

WEH001202A OLED Character 12x2 2.25 4.85 8.10 55.70 0.5 51.20 46.00(VA) 38.95(AA) 4.50 8.75 10.10 2.25 4.85 8.10 55.70 0.5 51.20 46.00(VA) 38.95(

(12 views)

PSE Technology Corporation SPECIFICATION FOR APPROVAL CUSTOMER NOMINAL FREQUENCY PRODUCT TYPE SPEC. NO. ( P/N ) CUSTOMER P/N ISSUE DATE VERSION APPRO

(12 views)

Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Isolation Type Package • Electrically Isolated

(12 views)