128-megabit Datasheet | Specifications & PDF Download

XM25QH128A XM25QH128A preliminary 128 Megabit 3V Serial Flash Memory with 4Kbyte Uniform Sector FEATURES  Single power supply operation - Full vo

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Features • Single Supply for Read and Write: 2.7 to 3.6V • Fast Read Access Time – 55 ns • Internal Program Control and Timer • Sector Architecture –

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www.DataSheet4U.com PDM41024 1 Megabit Static RAM 128K x 8-Bit Features n 1 2 3 4 5 6 7 Description The PDM41024 is a high-performance CMOS static

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Features • Fast Read Access Time – 120 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128 Bytes – Internal Control Timer

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AT29C010A Features • • • • • • • • • • • • • Fast Read Access Time - 70 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram

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AT27C010/L Features • • • • • • • • • Fast Read Access Time - 45 ns Low Power CMOS Operation 100 µA max. Standby 25 mA max. Active at 5 MHz (AT27C01

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Am29F010B Data Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to thi

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EN25Q128 EN25Q128 128 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 v

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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ACT–F4M32A High Speed 128 Megabit Sector Erase FLASH Multichip Module Advanced Features www.aeroflex.com/act1.htm s Ready/Busy output (RY/BY) – Hard

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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Features • Fast read access time – 45ns • Low-power CMOS operation – 100µA max standby – 25mA max active at 5MHz • JEDEC standard packages – 32-lead P

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Features • 1.65V - 1.95V Read/Write www.DataSheet4U.com • High Performance – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Bu

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EN25QX128A (2V) EN25QX128A (2V) 128 Megabit 3V Serial Flash Memory with 4Kbyte Uniform Spercetloimr inary FEATURES  Single power supply opera

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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FINAL Am29F010 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single power supply operation

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RAD Tolerant ACT–RS128K32 High Speed 4 Megabit SRAM Multichip Module Features s Overall configuration as 128K x 32 s Tolerant to 30KRad (Si) s Latch-u

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