12N65 Datasheet | Specifications & PDF Download

SEMICONDUCTOR I2N65 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 650Volts DESCRIPTION The Nell 12N65 is a three-terminal sil

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CEP12N65/CEB12N65 CEF12N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP12N65 CEB12N65 CEF12N65 VDSS 650V 650

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isc N-Channel MOSFET Transistor ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for

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ITA12N65R N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 0.66Ω ID 12A Features:

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTA12N65X2 IXTP12N65X2 IXTH12N65X2 VDSS = ID25 = RDS(on) 650V

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SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor wh

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RM12N650LD RM12N650IP N-Channel Super Junction Power MOSFETċ General Description The series of devices use advanced trench gate super junction tec

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTA12N65X2 IXTP12N65X2 IXTH12N65X2 VDSS = ID25 = RDS(on) 650V

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X2-Class HiPERFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA12N65X2 IXFP12N65X2 IXFH12N65X2 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static drain-source on-resistance: RDS(on) ≤ 300mΩ@VGS=10V ·Fully

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Silicon N-Channel Power MOSFET CS12N65 A8R ○R General Description： CS12N65 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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HFS12N65S Aug 2009 HFS12N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 0.67 ȍ ID = 12 A FEATURES ‰ Originative New Design ‰ Superior Avala

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isc N-Channel MOSFET Transistor IXTA12N65X2 ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static drain-source on-resistance: RDS(on) ≤ 300mΩ@V

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FQP12N65/FQPF12N65 650V, 12A N-Channel MOSFET General Description The FQP12N65 & FQPF12N65 have been fabricated using an advanced high voltage MOSFET

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X2-Class HiPERFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA12N65X2 IXFP12N65X2 IXFH12N65X2 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA

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X2-Class Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTP12N65X2M Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static drain-source on-resistance: RDS(on) ≤ 300mΩ@VGS=10V ·Fully

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AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 & AOTF12N65L & AOB1

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■ General Description MHF12N65CT, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduct

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 12N65 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Volta

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