12N65B Datasheet | Specifications & PDF Download

Advance Technical Information XPTTM 650V IGBT GenX4TM Extreme Light Punch Through IGBT for 5-30kHz Switching IXXP12N65B4 VCES = 650V IC110 = 12A

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Analog Power N-Channel 650-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica

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12N65(F,B,H) 12A mps,650 Volts N-CHANNEL MOSFET FEATURE  12A,650V,RDS(ON)=0.7Ω@VGS=10V/6A  Low gate charge  Low Ciss  Fast switching  100% ava

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SAMWIN TO-220F SW12N65B N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.85 Ω)@VGS=10V ■ Gate Charge (Typical 28nC) ■ Improved d

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QM12N65B 1 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description The QM12N65B is the highest performance N-ch MOSFETs with speci

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