13-MEMORY Datasheet | Specifications & PDF Download

JMB38X JMB38X Product Family PCI Express to 1394a OHCI and Memory Card Host Controller Overview JMB38X is product family that includes 1394a OHCI and

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W91820N SERIES 13-MEMORY TONE/PULSE DIALER WITH HANDFREE, LOCK AND HOLD FUNCTIONS GENERAL DESCRIPTION The W91820N is a series of tone/pulse switchable

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Obsolete 54F 74F413 64 x 4 First-In First-Out Buffer Memory with Parallel I O January 1995 54F 74F413 64 x 4 First-In First-Out Buffer Memory with

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CAPACITOR • THIN PROFILE PACKAGE • SUITABLE FOR FLOW SOLDERING • LEAD-FREE FINISH CHARACTERISTICS Ra

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www.DataSheet4U.com M50FLW080A M50FLW080B 8-Mbit (13 x 64-Kbyte Blocks + 3 × 16 × 4 Kbyte Sectors) 3-V supply, Firmware Hub / low-pin-count Flash mem

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ST25TB512-AC Datasheet 13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions -Unsawn wafer -Bumped and sawn w

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HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC133SDRAM E0021H20

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HN29W12811 Series 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit) ADE-203-1183C (Z) Rev. 2.0 Feb. 7, 2001 Description The Hitachi

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CAPACITOR • THIN PROFILE PACKAGE • SUITABLE FOR FLOW SOLDERING • LEAD-FREE FINISH CHARACTERISTICS Ra

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Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG (131072 words × 8 bits) Flash Memory Preliminary Overview The LE28C1001M, T series I

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HM5259165B-75/A6 HM5259805B-75/A6 HM5259405B-75/A6 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CAPACITOR • WIDE TEMPERATURE (-40°C~ +85°C) • SUITABLE FOR FLOW SOLDERING • LEAD-FREE FINISH CHARACT

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128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory (PCM) Features • High-performance READ – 115ns initial READ access – 135ns initial

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512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19

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SRT512 13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions Datasheet − production data Features ■ ISO 1444

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S1D13700F02 Embedded Memory Graphics LCD Controller www.DataSheet4U.com Hardware Functional Specification Document Number: X42D-A-001-01 Status: Revis

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PRODUCT SPECIFICATIONS ® Integrated Circuits Group LH28F400BVHE-BL85 4M Flash Memory (Model No.: LHF40V13) Spec No.: EL106160 Issue Date: August 3,

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Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG (131072 words × 8 bits) Flash Memory Preliminary Overview The LE28C1001M, T series I

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CAPACITOR • THIN PROFILE PACKAGE • SUITABLE FOR FLOW SOLDERING • LEAD-FREE FINISH CHARACTERISTICS Ra

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CAPACITOR • SUITABLE FOR FLOW SOLDERING • LEAD-FREE FINISH CHARACTERISTICS Rated Voltage Range Rated

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