M13S2561616A Datasheet - Elite Semiconductor Memory Technology

M13S2561616A, 4M x 16 Bit x 4 Banks Double Data Rate SDRAM

www.DataSheet4U.com ESMT Revision History Revision 0.1 (28 Apr.2006) - Original M13S2561616A Revision 1.0 (07 Jun.2006) - Delete Preliminary at e.
Pin Name Function Address inputs - Row address A0~A12 - Column address A0~A8 A10/AP : AUTO Precharge BA0, BA1 : Bank selects (4 Banks) Data-in/Data-ou.

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Datasheet Details

Part number:

M13S2561616A

Manufacturer:

Elite Semiconductor Memory Technology

File Size:

753.94 KB

Description:

4M x 16 Bit x 4 Banks Double Data Rate SDRAM

Features

* z z z z z z z z z z z z z z z z z z z z M13S2561616A 4M x 16 Bit x 4 Banks Double Data Rate SDRAM JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) On-chip DLL Differential clock inputs (CLK and CLK ) DLL aligns DQ and

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