1319 Datasheet | Specifications & PDF Download

NON-CATALOG Surface Mount Voltage Controlled Oscillator Linear Tuning 1730 to 2170 MHz ROS-2170-1319+ Features • linear tuning characteristics • low

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AOSS21319C 30V P-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Complian

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TA1319AP/AF Toshiba Bipolar Linear IC - Silicon Monolithic TA1319AP/AF TA1319AP Switched Mode Power Supply (SMPS) Controller IC The TA1319AP/AF is a

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Transistor 2SB1319 Silicon PNP epitaxial planer type For low-frequency power amplification Unit: mm 6.9±0.1 0.4 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±

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Ordering number:EN1334C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features · Hgih breakdown v

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Freescale Semiconductor Technical Data Document Number: MC13192 Rev. 2.9, 08/2005 MC13192/MC13193 (Scale 1:1) MC13192/MC13193 2.4 GHz Low Power Tra

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TA1319AP/AF Toshiba Bipolar Linear IC - Silicon Monolithic TA1319AP/AF TA1319AP Switched Mode Power Supply (SMPS) Controller IC The TA1319AP/AF is a

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lN1313 thru lN1327 CASE 53 Very low power zener diodes with standard ±10% tolerances. Available with ±5.0% tolerance by adding suffix A to type nu

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AOSX21319C 30V P-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Complian

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CY7C1319KV18/CY7C1321KV18 18-Mbit DDR II SRAM Four-Word Burst Architecture 18-Mbit DDR II SRAM Four-Word Burst Architecture Features ■ 18-Mbit densit

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GaAs Flip Chip Schottky Barrier Diodes Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Po

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Advance Product Information August 29, 2000 Ka Band Wideband LNA/Driver TGA1319C Key Features and Performance • • • • • • 0.15um pHEMT Technology 1

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A1318 and A1319 Linear Hall-Effect Sensor ICs with Analog Output Available in a Miniature, Low-Profile Surface-Mount Package FEATURES AND BENEFITS •

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CY7C1317BV18 CY7C1917BV18 CY7C1319BV18 CY7C1321BV18 18-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description • 18-Mbit densit

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Advance Product Information August 29, 2000 Ka Band Low Noise Amplifier TGA1319A Key Features and Performance • • • • • • 0.15um pHEMT Technology 21

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Freescale Semiconductor, Inc. Advance Information MC13190/D Rev. 1.2, 08/2003 2.4 GHz Short-Range, Low-Power Transceiver MC13190 Package Information

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w w w F i n i s a rom .c U Product Specification 4 t e Temperature 2 Gigabit Long-Wavelength Industrial e h Pluggable SFP Transceiver S a FTRJ1319P

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Freescale Semiconductor Technical Data Document Number: MC13192 Rev. 2.9, 08/2005 MC13192/MC13193 (Scale 1:1) MC13192/MC13193 2.4 GHz Low Power Tra

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GaAs Flip Chip Schottky Barrier Diodes Features • Low Series Resistance • Low Capacitance • High Cutoff Frequency • Silicon Nitride Passivation • Pol

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MCP131X/2X Voltage Supervisor Features Package Types • Low Supply Current: 1 µA (Typical),10 µA (Max.) • Precision Monitoring Trip Point Options: -

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