14N50 Datasheet | Specifications & PDF Download

N-Channel MOSFET Applications: • Adaptor • TV Main Power • LCD Panel Power FTP14N50C FTA14N50C Pb Lead Free Package and Finish VDSS 500V RDS(ON) (M

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N-Channel MOSFET Applications: • Adaptor • TV Main Power • LCD Panel Power FTP14N50C FTA14N50C Pb Lead Free Package and Finish VDSS 500V RDS(ON) (M

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UNISONIC TECHNOLOGIES CO., LTD 14N50-ML 14A, 500V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 14N50-ML is a high voltage power MOSFET combines

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AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description Product Summary The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated

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isc N-Channel MOSFET Transistor AOTF14N50FD FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source O

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SLP14N50C / SLF14N50C SLP14N50C / SLF14N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana

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AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description Product Summary The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated

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AOW14N50/AOWF14N50 500V, 14A N-Channel MOSFET General Description Product Summary The AOW14N50 & AOWF14N50 have been fabricated using an advanced h

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UNISONIC TECHNOLOGIES CO., LTD 14N50 14A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 14N50 is a N-Channel enhancement mode power MOSFET. The de

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SLB14N50C / SLI14N50C SLB14N50C / SLI14N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plan

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MTW14N50E Preferred Device Power MOSFET 14 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide en

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AOW14N50/AOWF14N50 500V, 14A N-Channel MOSFET General Description Product Summary The AOW14N50 & AOWF14N50 have been fabricated using an advanced h

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 500V D RDSON (MAX.) 0.6Ω ID 14A G UIS, 100% Tested S

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AOT14N50FD/AOTF14N50FD 500V, 14A N-Channel MOSFET General Description Product Summary The AOT14N50FD/AOTF14N50FD have been fabricated using an adva

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isc N-Channel MOSFET Transistor AOT14N50 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-R

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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500V N-Channel MOSFETs PDF14N50 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description Product Summary The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated

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isc N-Channel MOSFET Transistor AOB14N50 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-R

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