14N50 Datasheet | Specifications & PDF Download

N-Channel MOSFET Applications: • Adaptor • TV Main Power • LCD Panel Power FTP14N50C FTA14N50C Pb Lead Free Package and Finish VDSS 500V RDS(ON) (M

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UNISONIC TECHNOLOGIES CO., LTD 14N50 14A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 14N50 is a N-Channel enhancement mode power MOSFET. The de

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N-Channel MOSFET Applications: • Adaptor • TV Main Power • LCD Panel Power FTP14N50C FTA14N50C Pb Lead Free Package and Finish VDSS 500V RDS(ON) (M

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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MTW14N50E Preferred Device Power MOSFET 14 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide en

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500V N-Channel MOSFETs PDF14N50 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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isc N-Channel MOSFET Transistor AOW14N50 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-R

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UNISONIC TECHNOLOGIES CO., LTD 14N50-ML 14A, 500V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 14N50-ML is a high voltage power MOSFET combines

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DTN14N50SJ/DTP14N50SJ/DTP14N50FSJ www.din-tek.jp N-Channel 500-V (D-S) Super Junction MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 500 RDS(on) max. a

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DTK14N50SJ www.din-tek.jp N-Channel 500-V (D-S) Super Junction MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 500 RDS(on) max. at 25 °C (Ω) VGS = 10 V

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DTN14N50SJ/DTP14N50SJ/DTP14N50FSJ www.din-tek.jp N-Channel 500-V (D-S) Super Junction MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 500 RDS(on) max. a

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AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 500V D RDSON (MAX.) 0.6Ω ID 14A G UIS, 100% Tested S

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isc N-Channel MOSFET Transistor AOTF14N50FD FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source O

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AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description Product Summary The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated

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AOW14N50/AOWF14N50 500V, 14A N-Channel MOSFET General Description Product Summary The AOW14N50 & AOWF14N50 have been fabricated using an advanced h

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isc N-Channel MOSFET Transistor AOB14N50 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-R

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ZXT14N50DX SuperSOT4™ 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 17m ; IC= 6A DESCRIPTION This new 4th generation ul

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CMT14N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ‹ scheme to provide enhan

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