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Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

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2SC5200 ® Pb Free Plating Product 2SC5200 Pb 150 Watt Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943

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Silan Microelectronics SD4938_Datasheet 150V CURRENT MODE PWM CONTROLLER DESCRIPTION SD4938 is a current mode PWM controller with 150V MOSFET used

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R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃）   APPLICATIONS 

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Datasheet 2A 150KHz 40V Buck DC to DC Converter XL1509 Features  Wide 4.5V to 40V Input Voltage Range  3.3V,5V,12V, and adjustable versions  Out

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CMP150N03/CMB150N03/CMI150N03 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 150N03 is N-ch MOSFETs wit

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www.eicsemi.com SB5150 ~ SB5200 TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 150 ~ 200 Volts IO : 5.0 A

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Silicon N-Channel Power MOSFET ○R CS150N04 A8 General Description： CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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LM2596 SIMPLE SWITCHER Power Converter 150 kHz 3A Step-Down Voltage Regulator December 1997 LM2596 SIMPLE SWITCHER ® Power Converter 150 kHz 3A Step

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MS1504 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES W W W . Microsemi . COM The MS1504 is a 13.6 V

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www.DataSheet4U.com Ordering number : ENN7250 Thick-Film Hybrid IC STK412-150 Two-Channel Shift Power Supply Audio Power Amplifier ICs 150W + 150 W

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PMBR5H150SS \ SR5H15 ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS Voltage 150 V Current 5A Features  Plastic package has Underwriters Laboratory Fl

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community TAS5614LA SLAS846A – MAY 2012 – REVISED MARCH 2015 TAS5614LA

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TC1508A 、TC1508A  MOS  、、   （1.6Ω）  1.8A/, 2.5A   SOP-16 、TC1508A  、TC1508A ek NC 1 16 OUTA T INA 2 15 PGND INB 3 14

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TK150E09NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅧ-H) TK150E09NE  E-Bike  Low drain−source ON resistance : RDS (ON) =

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30mA Low Power LDO Features · Low power consumption · Low voltage drop · Low temperature coefficient · High input voltage (up to +18V) · Output volt

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CMT2150/57L CMT2150/57L 315/433/868/915 MHz Single-chip OOK Transmitter with Encoder Features SoCApplication  Operating frequency for CMT2150L: 2

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Datasheet 0.8A 150KHz 100V Buck DC to DC Converter XL7015 Features  Maximum Input Voltage 100V  Output Adjustable from 1.25V to 20V  Maximum Dut

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R SCHOTTKY BARRIER DIODE HBR3150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 3A 150 V 175 ℃ 0.76V （@Tj=125℃）  、  APPLICATIONS

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