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FDI150N10 - 100V 57A N-Channel MOSFET

Datasheet Summary

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on

state resistance while maintaining superior switching performance.

Features

  • RDS(on) = 12 mW (Typ. ) @ VGS = 10 V, ID = 49 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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Datasheet preview – FDI150N10

Datasheet Details

Part number FDI150N10
Manufacturer ON Semiconductor
File Size 327.41 KB
Description 100V 57A N-Channel MOSFET
Datasheet download datasheet FDI150N10 Datasheet
Additional preview pages of the FDI150N10 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH) 100 V, 57 A, 16 mW FDI150N10 Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features • RDS(on) = 12 mW (Typ.
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