FDI030N06 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Tele PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Renewable System D GDS I2-PAK G S MOSFET Maximum Ratings TC = 25oC...
FDI030N06 Key Features
- RDS(on) = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability
- RoHS pliant
FDI030N06 Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit