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FDI030N06 Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDI030N06 — N-Channel PowerTrench® MOSFET FDI030N06 N-Channel PowerTrench® MOSFET 60 V, 193 A, 3.

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Synchronous Rectification for ATX / Server / Tele PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Renewable System D GDS I2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise note.

Symbol VDSS VGSS ID IDM EAS dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) FDI030N06 60 ±20 193* 136* 120 772 1434 6 231 1.54 TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds -55 to +175 300 *Calculated continuous current based on maximum allowable junction temperature.

Key Features

  • RDS(on) = 2.6 mΩ (Typ. ) @ VGS = 10 V, ID = 75 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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