Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
DC to DC convertors / Synchronous Rectification
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G D S
I2-P
Features
- RDS(on) = 3.2mΩ ( Typ. ) @ VGS = 10V, ID = 75A.
- Fast Switching Speed.
- Low Gate Charge.
- High Performance Trench Technology for Extremely Low RDS(on).
- High Power and Current Handling Capability.
- RoHS Compliant
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General.
FDI040N06 Datasheet
