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FDI040N06 - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

DC to DC convertors / Synchronous Rectification D G D S I2-P

Key Features

  • RDS(on) = 3.2mΩ ( Typ. ) @ VGS = 10V, ID = 75A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant tm General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDI040N06 N-Channel PowerTrench® MOSFET June 2009 FDI040N06 N-Channel PowerTrench® MOSFET 60V, 168A, 4.0mΩ Features • RDS(on) = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant tm General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application • DC to DC convertors / Synchronous Rectification D G D S I2-PAK FDI Series G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol www.DataSheet4U.