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FDI040N06 Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDI040N06 N-Channel PowerTrench® MOSFET June 2009 FDI040N06 N-Channel PowerTrench® MOSFET 60V, 168A, 4.

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Application • DC to DC convertors / Synchronous Rectification D G D S I2-PAK FDI Series G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol ..

VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID IDM EAS dv/dt PD TJ, TSTG TL Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC Parameter Ratings 60 ±20 -Continuous (TC = 25oC, Silicion Limited) -Continuous (TC = 100oC, Silicion Limited) -Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) (Note 2) (Note 3) 168* 118* 120 672 872 7.0 231 1.54 -55 to +175 300 A mJ V/ns W W/oC o Units V V A Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C oC *Calculated continuous current based on maximum allowable junction temperature.

Key Features

  • RDS(on) = 3.2mΩ ( Typ. ) @ VGS = 10V, ID = 75A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant tm General.

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