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FDI025N06 - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

DC to DC convertors / Synchronous Rectification D GDS TO-262

Key Features

  • RDS(on) = 1.9mΩ ( Typ. ) @ VGS = 10V, ID = 75A.
  • Fast switching speed.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(on).
  • High power and current handling capability.
  • RoHS compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDI025N06 N-Channel PowerTrench® MOSFET June 2008 FDI025N06 N-Channel PowerTrench® MOSFET 60V, 265A, 2.5mΩ tm Features • RDS(on) = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handling capability • RoHS compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.