FDI025N06 Datasheet | Fairchild Semiconductor

FDI025N06 N-Channel PowerTrench® MOSFET June 2008 N-Channel PowerTrench® MOSFET 60V, 265A, 2.5mΩ tm Features - RDS(on) = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A - Fast switching speed - Low gate charge - High performance trench technology for extremely low RDS(on) - High power and current handling capability - RoHS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application - DC to DC convertors / Synchronous Rectification TO-262 FDI Series MOSFET Maximum Ratings TC =...