FDI025N06 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC to DC convertors / Synchronous Rectification D GDS TO-262 FDI Series G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter Ratings VDSS VGSS ID IDM EAS dv/dt PD Drain...
FDI025N06 Key Features
- RDS(on) = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low RDS(on)
- High power and current handling capability
- RoHS pliant
- DC to DC convertors / Synchronous Rectification
- Continuous (TC = 25oC) -Continuous (TC = 100oC)
- Pulsed