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FDI025N06 Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDI025N06 N-Channel PowerTrench® MOSFET June 2008 FDI025N06 N-Channel PowerTrench® MOSFET 60V, 265A, 2.

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Application • DC to DC convertors / Synchronous Rectification D GDS TO-262 FDI Series G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter Ratings VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt P

Key Features

  • RDS(on) = 1.9mΩ ( Typ. ) @ VGS = 10V, ID = 75A.
  • Fast switching speed.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(on).
  • High power and current handling capability.
  • RoHS compliant General.

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