15m Datasheet | Specifications & PDF Download

SFTN6015MP N-Channel Enhancement Mode MOSFET Drain Gate Source 1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain DFN3030 Plas

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, nRF9E5 433/868/915MHz RF Transceiver with Embedded 8051 Compatible Microcontroller and 4 Input, 10 Bit ADC Product Specification Key Features • nR

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NPIM Shielded Power Inductors NPIM_PA Series FEATURES • SHIELDED POWER INDUCTOR • MOLDED METAL COMPOSITE CONSTRUCTION • HIGH SATURATION CURRENT CHAR

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MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 31 mW, 31 A NTMFS034N15MC Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on

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MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 14 mW, 61 A NTMFS015N15MC Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on

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Model. -SAMSUNG SDI Confidential Proprietary – INR18650-15M Version No. 3.22 Sang-Uck Kim SPECIFICATION OF PRODUCT Lithium-ion rechargeable cell f

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PBSS2515MB 15 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 1 — 26 January 2012 Product data sheet 1. Product profile 1.1 General description NP

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nRF905 Single chip 433/868/915MHz Transceiver Product Specification Key Features • • • • • • • • • • • • • • • True single chip GFSK transceiver in a

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MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 7.3 mW, 101 A NTB7D3N15MC Features • Shielded Gate MOSFET Technology • Max RDS(on) = 7.3 mW at

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P-Channel Enhancement Mode Power MOSFET Description The PED2015M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It

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www.murata-ps.com NTA Series Isolated 1W Dual Output SM DC-DC Converters FEATURES „RoHS compliant „Efficiency up to 78% „Wide temperature performa

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MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 7.3 mW, 101 A NTP7D3N15MC Features • Shielded Gate MOSFET Technology • Max RDS(on) = 7.3 mW at

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MOSFET – Power, Single N-Channel, DFNW8 150 V, 6.4 mW, 128 A NVMTS6D0N15MC Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to M

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19-3273; Rev 1; 7/04 315MHz/433MHz ASK Superheterodyne Receiver with AGC Lock www.datasheet4u.com General Description Features ♦ Optimized for 315M

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CMT2210LH Low Power 315MHz/433.92MHz OOK Receiver Instruction: CMT2210LH is a low power, high performance OOK RF receiver. It is suitable for ISM ba

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MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 10.9 mW, 74.3 A NTP011N15MC Features • Shielded Gate MOSFET Technology • Max RDS(on) = 10.9 mW

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Cylindrical Proximity Sensor E2K-X CSM_E2K-X_DS_E_7_1 General-purpose Threaded Capacitive Sensor • Product lineup with M12, M18, and M30 models. • F

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NPIM Shielded Power Inductors NPIM_PA Series FEATURES • SHIELDED POWER INDUCTOR • MOLDED METAL COMPOSITE CONSTRUCTION • HIGH SATURATION CURRENT CHAR

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