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PBSS2515MB - NPN transistor

PBSS2515MB Description

PBSS2515MB 15 V, 0.5 A NPN low VCEsat (BISS) transistor Rev.1 * 26 January 2012 Product data sheet 1.Product profile 1.1 General descri.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.

PBSS2515MB Features

* Leadless ultra small SMD plastic package
* Low package height of 0.37 mm
* Low collector-emitter saturation voltage VCEsat

PBSS2515MB Applications

* DC-to-DC conversion
* Supply line switching
* Battery charger
* High efficiency due to less heat generation
* AEC-Q101 qualified
* Reduced Printed-Circuit Board (PCB) requirements
* LCD backlighting
* Driver in low supply voltage applications (e. g. lamps and LEDs)

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