* s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s
PBSS2515E Datasheet (110.11 KB)
PBSS2515E
110.11 KB
0.5a npn transistor.
PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 01 18 April 2005 www.DataSheet4U.com Product data sheet 1. Product profile 1.1.
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