PBSS2515VS NPN Transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VS 15 V low VCEsat NPN double transistor Product speciﬁcation Supersedes data of 2001 Sep 13 2001.
TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX.

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Datasheet Specifications

Part number: PBSS2515VS
Manufacturer: NXP ↗
File Size: 78.60 KB
Datasheet: PBSS2515VS_PhilipsSemiconductors.pdf
Description: NPN Transistor

Features

* 300 mW total power dissipation
* Very small 1.6 x 1.2 mm ultra thin package
* Excellent coplanarity due to straight leads
* Low collector-emitter saturation voltage
* High current capability
* Improved thermal behaviour due to flat lead
* Rep

Applications

* General purpose switching and muting
* Low frequency driver circuits
* LCD backlighting
* Audio frequency general purpose amplifier applications
* Battery driven equipment (mobile phones, video cameras and hand-held devices). handbook, halfpage 6 PBSS2515VS

PBSS2515VS Distributors

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PBSS2515VS NPN Transistor NXP

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