PBSS2515VS Datasheet - NXP

PBSS2515VS NPN Transistor

TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. 15 1 <500 UNIT V A mΩ 5 4 6 5 4 TR2 TR1 DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. MARKING TYPE NUMBER PBSS2515VS MARK.

PBSS2515VS Features

* 300 mW total power dissipation

* Very small 1.6 x 1.2 mm ultra thin package

* Excellent coplanarity due to straight leads

* Low collector-emitter saturation voltage

* High current capability

* Improved thermal behaviour due to flat lead

* Rep

PBSS2515VS_PhilipsSemiconductors.pdf