PBSS2515VS - NPN Transistor
TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX.
15 1 <500 UNIT V A mΩ 5 4 6 5 4 TR2 TR1 DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package.
PNP complement: PBSS3515VS.
MARKING TYPE NUMBER PBSS2515VS MARK
PBSS2515VS Features
* 300 mW total power dissipation
* Very small 1.6 x 1.2 mm ultra thin package
* Excellent coplanarity due to straight leads
* Low collector-emitter saturation voltage
* High current capability
* Improved thermal behaviour due to flat lead
* Rep
