PBSS2515YPN - low VCE(sat) NPN/PNP transistor

NXP

PBSS2515YPN Datasheet Preview — Preview of PBSS2515YPN PDF

Datasheet Details

Part number	PBSS2515YPN
Manufacturer	NXP ↗
File Size	124.96 KB
Description	low VCE(sat) NPN/PNP transistor
Datasheet	PBSS2515YPN_PhilipsSemiconductors.pdf

PBSS2515YPN Product details

Description

NPN/PNP low VCEsat transistor pair in a SC-88 plastic package. = -: made in Hong Kong = t: made in Malaysia = W: made in China. Fig.1 6 handbook, halfpage 5 4 PBSS2515YPN QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2

Features

Low collector-emitter saturation voltage.
High current capability.
Replaces two SC-70 packaged low VCEsat transistors on same PCB area.
Reduces required PCB area.
Reduced pick and place costs.

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Published: Jan 19, 2007 |