PBSS2540F Datasheet - NXP

PBSS2540F 40 V low V NPN transistor

handbook, halfpage PBSS2540F QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 40 500 1 <500 UNIT V mA A mΩ 3 3 1 2 MAM410 NPN low VCEs.

PBSS2540F Features

* Low collector-emitter saturation voltage

* High current capability

* Improved thermal behaviour due to flat leads

* Enhanced performance over SOT23 general purpose transistors. APPLICATIONS

* General purpose switching and muting

* Low frequency drive

PBSS2540F_PhilipsSemiconductors.pdf