* 300 mW total power dissipation
* Very small 1.6 × 1.2 mm ultra thin package
* Excellent coplanarity due to straight leads
* Low collector-emitter saturation voltage
* High current capability
* Improved thermal behaviour due to flat lead
* Rep
PBSS2515VPN Datasheet (98.15 KB)
PBSS2515VPN
98.15 KB
Npn/pnp transistor.
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS2515VPN 15 V low VCE(sat) NPN/PNP transistor
Product data sheet Supersedes data of 2001 Nov 07
2005 J.
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